200912071-3 adva nced power electronics corp. 1/5 AP80T10GP-HF-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com n-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings thermal data a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the AP80T10GP-HF-3 is in the to-220 through-hole package which is g d s fast switching performance r 9.5mw simple drive requirement low on-resistance rohs-compliant , halogen-free i 8 5a used in commercial app plication s where a low pcb footprint or an attached heatsink is required. this device is well suited for low voltage applications such as dc/dc converters. o rdering information AP80T10GP-HF-3 tb : in rohs-compliant halogen-free to-220, shipped in tubes (50pcs/tube) symbol value units rthj-c maximum thermal resistance, junction-case 0 . 9 c /w rthj-a maximum thermal resistance, junction-ambient 62 c /w parameter symbol units v ds v v gs v i d at t c =2 5 c i d at t c = 25 c i d at t c = 100 c i dm a p d at t c =2 5 c t stg t j -55 to 175 c parameter rating drain-source voltage 100 gate-source voltage 20 continuous drain current, (silicon limited) 8 5 a continuous drain curren t (package limited) 8 0 a pulsed drain curren t 1 3 00 continuous drain current storage temperature range total power dissipation 166 w -55 to 175 c operating junction temperature range bv 10 0v 6 0 a to-220 (p) d (tab) s d g
adva nced power electronics corp. 2/5 AP80T10GP-HF-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) source-drain diode this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 1. pulse width limited by maximum junction temperature. 2. pulse test symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 100 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 9.5 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 5 v g fs forward transconductance v ds =10v, i d =40a - 75 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 25 ua i gss gate-source leakage v gs = 20v, v ds =0v - - 100 na q g total gate charge 2 i d =40a - 115 180 nc q gs gate-source charge v ds =80v - 30 - nc q gd gate-drain ("miller") charge v gs =10v - 48 - nc t d(on) turn-on delay time 2 v ds =50v - 21 - ns t r rise time i d =30a - 58 - ns t d(off) turn-off delay time r g =1w ,v gs =10v - 41 - ns t f fall time r d =1.66w -15- ns c iss input capacitance v gs =0v - 6000 9600 pf c oss output capacitance v ds =25v - 550 - pf c rss reverse transfer capacitance f=1.0mhz - 300 - pf symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =40a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =10a, v gs =0v - 75 - ns q rr reverse recovery charge di/dt=100a/s - 230 - nc
adva nced power electronics corp. 3/5 AP80T10GP-HF-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bvdss vs. fig 4. normalized on-resistance junction temperature vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics 0 50 100 150 200 250 0 4 8 12 16 20 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v v g = 6.0v 0 40 80 120 160 024681 0 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 9.0v 8.0v 7.0v v g = 6.0v t c =175 o c 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 200 t j ,junction temperature ( o c) normalized v gs(th) (v) 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized bv dss (v)
adva nced power electronics corp. 4/5 AP80T10GP-HF-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveforms fig 12. gate charge waveform typical electrical characteristics (cont.) t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10 v q gs q gd q g charge 0 2 4 6 8 10 12 0 40 80 120 160 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =50v v ds =60v v ds =80v i d =40a 0 2000 4000 6000 8000 10000 1 5 9 1 31 72 12 52 9 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on)
adva nced power electronics corp. 5/5 AP80T10GP-HF-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-220 marking information: product: ap80t10 gp = rohs-compliant halogen-free to-220 date/lot code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence package code millimeters min nom max a 4.40 4.60 4.80 b 0.76 0.88 1.00 d 8.60 8.80 9.00 c 0.36 0.43 0.50 e 9.80 10.10 10.40 l4 14.70 15.00 15.30 l5 6.20 6.40 6.60 d1 c1 1.25 1.35 1.45 b1 1.17 1.32 1.47 l 13.25 13.75 14.25 e l1 2.60 2.75 2.89 f 3.71 3.84 3.96 e1 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. 2.54 ref. 7.4 ref, symbols 5.10 ref. e1 b b1 e d l4 l1 a c1 c l 80t10gp ywwsss f l5 e d1
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